The distribution of implanted Sn was determined by means of secondary ion mass spectrometry. By comparing the distribution before and after high-temperature annealing, the diffusion coefficient was obtained as a function of temperature. It was found that the diffusion coefficients (table 37) exhibited an Arrhenius behavior; with an activation energy for diffusion of 4.91eV. Although the diffusion coefficient was higher than the corresponding value for self-diffusion, the activation energies were similar to those for Si and self-diffusion. It was suggested that the diffusion mechanism for Sn was similar to that for self-diffusion.

Diffusion of Ion Implanted Sn in Si, Si1-xGex, and Ge. P.Kringhøj, R.G.Elliman: Applied Physics Letters, 1994, 65[3], 324-6

Table 36

Diffusivity of 30Si in Doped Si

* intrinsic