The diffusion of tellurium in silicon was investigated by means of secondary ion mass spectrometry. At 900 to 1250C, the diffusion coefficient was found to range from ∼2 x 10−15 to 6 x 10−12cm2/s; several orders of magnitude lower than those of S and Se. The results could be expressed as:

D(cm2/s) = 5.0 x 10-1exp[-3.34(eV)/kT]

suggesting a predominantly substitutional diffusion mechanism.

Diffusion of Tellurium Dopant in Silicon. E.Janzén, H.G.Grimmeiss, A.Lodding, C.Deline: Journal of Applied Physics, 1982, 53, 7367