A systematic investigation of the diffusion of Ti was carried out. The element was implanted into wafers as low-dose impurity, and then post heat-treatment of the ion-implanted sample was conducted at various temperatures for a specific time. Following annealing, the depth profile was obtained by secondary ion mass spectrometry.
Secondary Ion Mass Spectrometry Characterization of the Diffusion Properties of 17 Elements Implanted into Silicon. H.Francois-Saint-Cyr, E.Anoshkina, F.Stevie, L.Chow, K.Richardson, D.Zhou: Journal of Vacuum Science and Technology B, 2001, 19[5], 1769-74
Table 37
Diffusivity of Sn in Si
Temperature (C) | D (cm2/s) |
1195 | 7.8 x 10-14 |
1097 | 6.3 x 10-15 |
1045 | 1.2 x 10-15 |
1045 | 1.0 x 10-15 |
998 | 1.9 x 10-16 |
998 | 1.7 x 10-16 |