The depth profiles of high dosage 51V+ ions implanted into (100) crystalline samples after annealing at between 300 and 1000C were studied by secondary ion mass spectrometry and cross-sectional transmission electron microscopy. At dosages of 1015/cm2 and above, the surface layer of the substrate was amorphized. During subsequent thermal annealing, the depth profiles of the implanted ions were strongly coupled to the solid phase epitaxial growth of amorphous Si. After annealing of the 1015/cm2 implanted samples at 900C and 1000C, only 10% of the V had escaped. The V-implanted sample exhibited only a narrowing of the V profile after 1000C annealing.

Diffusion Profiles of High Dosage Cr and V Ions Implanted into Silicon. P.Zhang, F.Stevie, R.Vanfleet, R.Neelakantan, M.Klimov, D.Zhou, L.Chow: Journal of Applied Physics, 2004, 96[2], 1053-8