The effect of N upon B diffusion through oxynitride gate dielectrics was studied by means of the secondary ion mass spectroscopy of polycrystalline Si(O,N)-Si structures, and the X-ray photo-electron spectroscopy of Si-B-Si(O,N)-Si structures. The data showed that the in-diffusion of B resulted in the removal of N from the oxynitride. This indicated that the role played by N in suppressing B penetration was chemical rather than diffusive.

The Removal of Nitrogen during Boron Indiffusion in Silicon Gate Oxynitrides. K.A.Ellis, R.A.Buhrman: Applied Physics Letters, 1996, 69[4], 535-7