Secondary ion mass spectrometric studies of Si-rich layers revealed an exponential increase in Ge diffusion, and an exponential decrease in B diffusion, as a function of compressive strain; thus indicating a linear dependence of the activation energy upon strain. It was suggested that the effect arose from structural relaxation of the lattice around the defects which mediated the diffusion. This relaxation was inward for a vacancy and outward for an interstitial.

Diffusion in Strained Si(Ge). N.E.B.Cowern, P.C.Zalm, P.Van der Sluis, D.J.Gravesteijn, W.B.De Boer: Physical Review Letters, 1994, 72[16], 2585-8