Diffusion in quantum-well structures was studied by heat-treating under various ambient atmospheres, and using depth-selective ion implantation. Secondary ion mass spectroscopy and X-ray diffraction data demonstrated that metal components diffused via group-II lattice sites at temperatures below 500C. Both p-type doping and the generation of group-II vacancies led to a marked enhancement of diffusion. The more stable group-VI element, S, diffused via a kick-out mechanism.

Diffusion of Cd, Mg and S in ZnSe-Based Quantum Well Structures. M.Strassburg, M.Kuttler, U.W.Pohl, D.Bimberg: Thin Solid Films, 1998, 336[1-2], 208-12