Layers of N-doped material were grown via molecular beam epitaxy, and exposed to a H or D plasma. Diffusion profiles for D were measured by means of secondary ion mass spectroscopy. The main feature of the profiles was the existence of a plateau where the H concentration closely matched the total N content of the layers. Electrical and photoluminescence studies, before and after H-plasma exposure, showed that acceptor and donor N-related centres were passivated by H. The results demonstrated that, in the N-doped material, H passivated the N acceptors and the related N donors.

Interactions of Intentionally Diffused Hydrogen with Nitrogen Acceptors and Nitrogen Related Donor Centers in Molecular Beam Epitaxy Grown ZnSe H.Pelletier, B.Theys, A.Lusson, E.Tournié, J.Chevallier, Y.Marfaing, J.P.Faurie: Journal of Applied Physics, 1999, 86[3], 1393-7