The thermal diffusion of Al in ZnTe was studied by using secondary ion mass spectroscopy. The relationships between the diffusion coefficient and the Al concentration were deduced from Al depth profiles by using a Boltzmann-Matano analysis. The diffusion coefficient depended upon the Al concentration and it became large at the high doping level; due probably to an increase in Zn vacancy concentration attributed to the self-compensation effect. As a result of a decrease in the diffusion coefficient at low Al concentrations, a rapid decrease in the Al concentration was observed at the diffusion front. This could lead to the formation of very abrupt p-n junctions.

Study of Al Thermal Diffusion in ZnTe using Secondary Ion Mass Spectroscopy. T.Tanaka, N.Murata, K.Saito, M.Nishio, Q.Guo, H.Ogawa: Physica Status Solidi B, 2007, 244[5], 1685-90

 

Table 38

Diffusivity of Al in ZnTeS on GaAs Substrates

Substrate Type

Al (/cm3)

Temperature (C)

Limit

D (cm2/s)

(100)

2.13 x 1019

450

upper

3.71 x 10-15

(100)

2.13 x 1019

450

lower

5.49 x 10-16

(100)

2.13 x 1019

550

upper

4.97 x 10-14

(100)

2.13 x 1019

550

lower

6.02 x 10-15

(511)

2.11 x 1019

450

upper

3.52 x 10-15

(511)

2.11 x 1019

450

lower

7.65 x 10-16

(511)

2.11 x 1019

550

upper

4.25 x 10-14

(511)

2.11 x 1019

550

lower

7.24 x 10-15

(711)

2.18 x 1019

450

upper

3.45 x 10-15

(711)

2.18 x 1019

450

lower

9.21 x 10-16

(711)

2.18 x 1019

550

upper

3.45 x 10-14

(711)

2.18 x 1019

550

lower

5.47 x 10-15