Sandwich structures of the form, ZnSTe/ZnSTe:Al/ZnSTe, were fabricated - by means of molecular beam epitaxy - on substrates which were oriented along (100), (511) or (711). The thermal diffusion of the Al in the ZnS0.986Te0.014 was then studied by using secondary ion mass spectroscopic depth-profiling. The relative sensitivity factor of Al with respect to Zn was 4.5 x 1019/cm3. The Al diffusion coefficients at 450 and 550C were found to be equal to 2.1 x 10-15 and 2.1 x 10-14cm2/s, respectively. The diffusion appeared to be isotropic; regardless of the crystallographic orientation (table 39).

SIMS Study of Al Thermal Diffusion in MBE-Grown Sandwiched-ZnSTe Structures Z.H.Ma, T.Smith, I.K.Sou: Journal of Crystal Growth, 1999, 201-202, 470-3