The serial sectioning method was used to study the diffusion of 124Sb into 0.005 to 0.01mm-thick epitaxial films of p-type material. It was found that, for dislocation densities of 103 to 104/cm2, the measured diffusivities agreed with those for Sb diffusion in single crystals. At 1250 to 1500K, the data could be described by:

D (cm2/s) = 7.9 x 100 exp[-3.98(eV)/kT]

For dislocation densities of 3 x 106 to 6 x 106/cm2, the results at 1250 to 1500K were described by:

D (cm2/s) = 4.4 x 100 exp[-3.76(eV)/kT]

V.A.Uskov, S.P.Svetlov: Izvestiya Vysshikh Uchebnykh Zavedenii Fizika, 1972, 15[7], 145-7

The best linear fits to the solute diffusion data ([124] to [129], [133] to [144], [146] to [176], [188] to [192], [196] to [211], [215] to [223], [234] to [242], [252] to [283], [292] to [298], [306] to [314]) yield:

Al: Ln[Do] = 0.45E – 32.8 (R2 = 0.81); As: Ln[Do] = 0.29E – 23.2 (R2 = 0.87);

Au: Ln[Do] = 0.16E – 12.4 (R2 = 0.16); B: Ln[Do] = 0.29E – 22.6 (R2 = 0.79);

Cu: Ln[Do] = 0.22E (R2 = 0.86); Fe: Ln[Do] = 0.62E – 15.8 (R2 = 0.53);

Ga: Ln[Do] = 0.20E - 16.9 (R2 = 0.78); Ge: Ln[Do] = 0.29E – 23.2.8 (R2 = 0.98);

H: Ln[Do] = 0.17E - 9.9 (R2 = 0.07); Li: Ln[Do] = 0.25E – 9.6 (R2 = 0.48);

Ni: Ln[Do] = 0.29E - 19.4 (R2 = 0.66); O: Ln[Do] = 0.34E – 21.6 (R2 = 0.95);

P: Ln[Do] = 0.35E - 27 (R2 = 0.94); Sb: Ln[Do] = 0.35E – 29.3 (R2 = 0.96);

Si: Ln[Do] = 0.33E - 29 (R2 = 0.86)