Changes in 18O and 28Si profiles were measured by means of secondary ion mass spectrometry. After Si implantation, it was observed that 18O diffused into the bulk; either along grain boundaries or through the volume. In the case of annealed samples, kinetic processes at a discontinuity in the Si profile were observed and an enhanced O diffusivity due to radiation damage in the implanted layer was deduced from the change in the 18O profile.

I.Sakaguchi, S.Hishita, H.Haneda, T.Yanagitani: Materials Science and Engineering B, 1995, 33[2-3], L10-2