The kinetics of D doping and removal from polycrystalline thin films during annealing were investigated by using secondary ion mass spectrometry depth profiling. The data were then correlated with changes in the electrical behavior of the films. The results for the D-doping of exposed (Ba,Sr)TiO3 films on a The kinetics of D doping and removal from polycrystalline thin films during annealing were investigated by using secondary ion mass spectrometry depth profiling. The data were then correlated with changes in the electrical behavior of the films. The results for the D-doping of exposed (Ba,Sr)TiO3 films on a bottom Pt electrode layer were consistent with the incorporation of D interstitial defects at the (Ba,Sr)TiO3/Pt interface and with so-called upward diffusion towards the film surface. The incorporation kinetics of D in Pt/(Ba,Sr)TiO3/Pt capacitors were more complex, and were greatly enhanced by the presence of the upper Pt electrode. The removal of D from D2/N2-exposed Pt/(Ba,Sr)TiO3/Pt specimens during O recovery annealing appeared to be limited by the rate of an interfacial reaction at 200 to 250C. The pre-D2 exposure leakage current properties of (Ba,Sr)TiO3 capacitors were found to be largely recovered when the D concentration in the films was reduced to about 1019/cm3 during post-D2 O-recovery annealing.

Deuterium in (Ba,Sr)TiO3 Thin Films - Kinetics and Mechanisms of Incorporation and Removal during Annealing. P.C.McIntyre, J.H.Ahn, R.J.Becker, R.V.Wang, S.R.Gilbert, L.W.Mirkarimi, M.T.Schulberg: Journal of Applied Physics, 2001, 89[11], 6378-88

Figure 21

Diffusion of O in BaLaxTi1+xO3

(Solid line: x = 0, dotted line: x = 0.001,

dashed line: x = 0.005, dot-dash line: x = 0.02)