Samples were prepared from  (111)-oriented p-type monocrystalline wafers, and Sb-doped SiO2 was chemical vapor deposited onto the surface. Diffusion experiments were carried out using surface concentrations of 5 x 1018, 1 x 1019, or 4.5 x 1019/cm3. The concentration profiles were determined by using resistivity measurements. The diffusion data, at 1000 to 1150C, which corresponded to the latter 3 concentrations could be described by:

5 x 1018/cm3:     D (cm2/s) = 9.70 x 103 exp[-4.87(eV)/kT]

1 x 1019/cm3:     D (cm2/s) = 3.65 x 102 exp[-4.44(eV)/kT]

4.5 x 1019/cm3:     D (cm2/s) = 1.43 x 102 exp[-4.30(eV)/kT]

S.H.Song, S.Matsumoto, T.Niimi: Japanese Journal of Applied Physics, 1979, 18[11], 2181-2

The best linear fits to the solute diffusion data ([124] to [129], [133] to [144], [146] to [176], [188] to [192], [196] to [211], [215] to [223], [234] to [242], [252] to [283], [292] to [298], [306] to [314]) yield:

Al: Ln[Do] = 0.45E – 32.8 (R2 = 0.81); As: Ln[Do] = 0.29E – 23.2 (R2 = 0.87);

Au: Ln[Do] = 0.16E – 12.4 (R2 = 0.16); B: Ln[Do] = 0.29E – 22.6 (R2 = 0.79);

Cu: Ln[Do] = 0.22E (R2 = 0.86); Fe: Ln[Do] = 0.62E – 15.8 (R2 = 0.53);

Ga: Ln[Do] = 0.20E - 16.9 (R2 = 0.78); Ge: Ln[Do] = 0.29E – 23.2.8 (R2 = 0.98);

H: Ln[Do] = 0.17E - 9.9 (R2 = 0.07); Li: Ln[Do] = 0.25E – 9.6 (R2 = 0.48);

Ni: Ln[Do] = 0.29E - 19.4 (R2 = 0.66); O: Ln[Do] = 0.34E – 21.6 (R2 = 0.95);

P: Ln[Do] = 0.35E - 27 (R2 = 0.94); Sb: Ln[Do] = 0.35E – 29.3 (R2 = 0.96);

Si: Ln[Do] = 0.33E - 29 (R2 = 0.86)