The diffusion of D was studied in diamond-like C films, having various Si contents, which had been deposited by using a pulsed-arc discharge method in a D atmosphere. The D concentration profiles were measured by using secondary ion mass spectrometry and elastic-recoil detection techniques. A model was proposed in order to describe the experimental depth profiles. The diffusion, de-trapping, and trapping of D were taken into account by the model. The diffusion coefficients which were obtained for non-trapped D indicated activation energies of 1.5, 0.7, 0.6 and 1.2eV for samples which contained 0, 6, 15 and 33at%Si, respectively.

Deuterium Diffusion in Silicon-Doped Diamond-Like Carbon Films. E.Vainonen-Ahlgren, T.Ahlgren, J.Likonen, S.Lehto, T.Sajavaara, W.Rydman, J.Keinonen, C.H.Wu: Physical Review B, 2001, 63[4], 045406 (7pp)