The migration of Au in c-axis oriented 750nm-thick film samples was studied after ion implantation (1.5MeV 197Au, 5 x 1015/cm2). The films were deposited by means of high-pressure planar direct-current sputtering onto <100> LaAlO3. The use of secondary ion mass spectroscopy showed that the as-implanted Au distribution was essentially Gaussian, and that the depth of the maximum Au concentration (1.2wt%) was 201nm. The projected range was in very good agreement with predictions, although the measured straggle was some 20% greater than expected. It was also found that the implanted Au began to migrate at between 650 and 700C. This was much higher than that (about 175C) for implanted 2H or that (between 250 and 300C) for implanted 18O.

Secondary Ion Mass Spectroscopy Study of Au Trapping and Migration in the Au-Irradiated YBa2Cu3O7-δ Film. Y.Li, J.A.Kilner, J.R.Liu, W.K.Chu, G.A.Wagner, R.E.Somekh: Applied Physics Letters, 1996, 68[19], 2738-40