Ion implantation and secondary ion mass spectroscopy were used to study the trapping and migration of D, in c-oriented films (800 to 900nm), between room temperature and 350C. The D was implanted (50keV, 1016/cm2) at room temperature. Samples of the as-implanted material were annealed in flowing O. The D concentration versus depth profiles were measured by means of secondary ion mass spectrometry. It was found that OH exhibited a decreasing diffusion-controlled distribution, down to a depth of about 150nm in the as-received film. It was suggested that some of the implanted D had to bond with O. It was concluded that the implanted D was a fast diffuser in these films.

Y.Li, J.A.Kilner, T.J.Tate, M.J.Lee, Y.H.Li, P.G.Quincey: Nuclear Instruments and Methods in Physics Research B, 1995, 99[1-4], 627-31