A c-axis oriented Cu3Ba2YO7 film (180 to 230nm) was deposited onto <100>LaAlO3 by direct current sputtering and was bombarded with 50keV 2H+ (D) ions, at room temperature, to a dose of 1016/cm2. Secondary ion mass spectroscopic analysis showed that, after implantation, the 2H was trapped in both the film and the substrate. Thus, when the thickness of the Cu3Ba2YO7 film was about 180nm, it contained about 4.5% of the retained dose. The as-implanted 2H distribution was essentially Gaussian, and the depth of the maximum 2H concentration was about 485nm. It was concluded that target crystallinity had to be taken into account with regard to range data, since the experimental range values were larger than predicted. Implantation also made the Cu3Ba2YO7 film more granular. Cross-sectional transmission electron microscopy revealed a damaged band, within the irradiated LaAlO3 substrate, which was centered at about 85% of the depth of maximum 2H concentration.

A Study of 2H Trapping in YBa2Cu2O7-δ /LaAlO3 <100> Samples under 2H+ Irradiation. Y.Li, J.A.Kilner, T.J.Tate, M.J.Lee, F.M.Saba, L.F.Cohen, A.D.Caplin, P.G.Quincey: Journal of Applied Physics, 1994, 75[8], 4081-4

Table 60

Diffusion of Co in Cu3Ba2YO7