In order to study O migration in film samples during rapid thermal annealing, c-axis oriented films (800 to 900nm) was implanted with 200keV 18O+ ions to a dose of 5 x 1016/cm2 at room temperature. The samples were then annealed (450 to 870C, 120s or 870C, 20s) in flowing O. Concentration versus depth profiles were obtained by means of secondary ion mass spectrometry. It was found that there was clear evidence that rapid thermal annealing (450C, 120s) resulted in an obvious re-distribution of the as-implanted 18O, but led to only a very small amount of O isotopic exchange between the ambient atmosphere and the implanted 18O. In this case, the retained dose was about 95.6% of the dose after implantation. Rapid thermal annealing (870C, 20s) resulted in appreciable O exchange between the ambient atmosphere and the implanted 18O, and the retained dose was smaller than 1%.

Y.Li, J.A.Kilner, T.J.Tate, P.G.Quincey: Nuclear Instruments and Methods in Physics Research B, 1996, 118[1-4], 670-5

Table 63

Diffusion of 65Zn in Polycrystalline Cu3Ba2YO7