The Se was doped into material which was pre-doped with B, Ga, Al or In. The Se acted as a double donor, and paired with all of the dopants to give a donor level at Ec-0.2eV. An additional donor level at Ec-0.3eV was linked to the first ionization level of Se in Si. Diffusion measurements, performed at 800 to 1250C, showed that the diffusion coefficient of Se was given by:

D (cm2/s) = 2.47 x 100 exp[-2.84(eV)/kT]

H.R.Vydyanath, J.S.Lorenzo, F.A.Kröger: Journal of Applied Physics, 1978, 49[12], 5928-37