The penetration of P and As from P-doped and As-doped polycrystalline Si, and through HfSixOyNz (18%N) films into Si(100), was studied by using a combination of chemical etching and secondary ion mass spectrometry. Both As and P dopant penetration was found to be at the limit of detection by secondary ion mass spectrometry.

Phosphorus and Arsenic Penetration Studies through HfSixOy and HfSixOyNz Films. M.A.Quevedo-Lopez, M.El-Bouanani, M.J.Kim, B.E.Gnade, R.M.Wallace, M.R.Visokay, A.Li-Fatou, M.J.Bevan, L.Colombo: Applied Physics Letters, 2002, 81[9], 1609-11