Microstructures and O diffusion were investigated at the LaMnO3 film/Y2O3-stabilized ZrO2 interface by means of transmission electron microscopy, atomic force microscopy and secondary ion mass spectrometry of samples after heat treatment and 16O/18O exchange experiments. In as-deposited LaMnO3 films on stabilized ZrO2, the 18O-diffusion profile revealed a significant decrease in 18O concentration near to the LaMnO3 film/ZrO2 interface; which corresponded to an amorphous layer. Heat treatment decreased the amorphous layer at the LaMnO3/ZrO2 interface. In heat-treated (1473K, 5h) samples, the 18O-diffusion profile in the LaMnO3 film exhibited a gradual decrease to a minimum 18O concentration at the LaMnO3/ZrO2 interface. This was attributed to the grain growth of lanthanum manganite, which provided shorter paths to the ZrO2.

Microstructures and Oxygen Diffusion at the LaMnO3 Film/Yttria-Stabilized Zirconia Interface. T.Horita, T.Tsunoda, K.Yamaji, N.Sakai, T.Kato, H.Yokokawa: Solid State Ionics, 2002, 152-153, 439-46