The distribution of Se was deduced from sheet resistivity and sheet Hall coefficients, as a function of temperature; combined with layer removal. The diffusion coefficient was estimated from the concentration of Se double-donors, at 0.26 and 0.50eV below the conduction band edge. Between 1000 and 1250C, the temperature dependence of the diffusion coefficient was described by:

D (cm2/s) = 1.1 x 10-1 exp[-2.42(eV)/kT]

C.H.Kim, M.Sakata: Japanese Journal of Applied Physics, 1979, 18[2], 247-54