As-received or annealed films of Pt on Al2O3 substrates were characterized by means of slow positron implantation spectroscopy. Bulk Pt samples were also investigated by using conventional positron annihilation spectroscopy as well as slow positron implantation spectroscopy. State-of-the-art theoretical calculations were used in order to aid interpretation of the experimental findings. It was suggested that the positron lifetimes in the vacancy+dislocation, monovacancy, and divacancy were equal to 168, 174 and 206ps, respectively, but it was not yet possible to exclude the existence of certain vacancy+impurity complexes. The true positron lifetime for trapping at an edge dislocation could also not be verified here because the presence of this defect was always masked by the existence of defects which were more attractive to positrons. The as-received or annealed film samples contained the same type of open-volume defect, which was probably of the size of a monovacancy. However, the defect concentration decreased with depth in the as-received film; as compared with a uniform distribution in the annealed film. It was generally much larger than that in the annealed film.

Characterization of rf-Sputtered Platinum Films by Positron Annihilation Spectroscopy. G.Brauer, W.Anwand, E.M.Nicht, J.Kuriplach, I.Procházka, F.Bečvář, A.Osipowicz, P.G.Coleman: Physical Review B, 2000, 62[8], 5199-206