B diffusion in implanted Ni2Si and NiSi layers was studied using secondary ion mass spectrometry, and compared to B redistribution profiles obtained after the reaction of a Ni layer on a B-implanted Si(001) substrate, in same annealing conditions (400–550C). B diffusion appears faster in Ni2Si than in NiSi. The B solubility limit was larger than 1021atoms/cm3 in Ni2Si, while it was ∼ 3 x 1019atoms/cm3 in NiSi. The solubility limit found in NiSi was in agreement with the plateau observed in B profiles measured in NiSi after the reaction of Ni on B-implanted Si.

B Diffusion in Implanted Ni2Si and NiSi Layers. I.Blum, A.Portavoce, L.Chow, D.Mangelinck, K.Hoummada, G.Tellouche, V.Carron: Applied Physics Letters, 2010, 96[5], 054102