The self-diffusion of 18O into Pb(Zr,Ti)O3 thin films on Pt/TiO2 coated Si wafers from an ambient of 99% 18O2 gas tracer was investigated by secondary ion mass spectroscopy when annealed (450, 550 and 650C, up to 0.5h). The results showed that the 18O profile changed significantly with annealing temperature and the highest concentration of exchanged O was at the PZT/Pt interface when annealed at 650C. Modelling of the O tracer diffusion profiles from the 450 and 550C data yielded an activation energy of 0.83eV when assuming 1-dimensional diffusion. Simulation of the 650C secondary ion mass spectrometry data indicated that the O was dissociating on the catalytic Pt film and then back-diffusing; causing a higher concentration of O at the PZT/Pt interface than at the surface.

Oxygen Tracer Diffusion in Pb(Zr,Ti)O3 Thin Film Enhanced by Catalytic Platinum. J.S.Cross, K.Kurihara, N.Kamehara, H.Haneda, I.Sakaguchi: Applied Physics Letters, 2005, 86[14], 141909