The modelling of experimental B diffusion profiles which had been measured by means of secondary ion mass spectrometry, after B implantation and annealing at 1700 to 1800C, was considered. Transient enhanced B diffusion, as caused by implantation damage, was reduced by recovery annealing of B-implanted samples at 900C before diffusion annealing. The B concentration profiles were accurately described in terms of the kick-out mechanism. Simulations which were based upon this model also accurately reproduced diffusion, from a buried B-doped SiC layer, into undoped SiC epitaxial layers. This showed that Si self-interstitials, rather than Si vacancies, controlled B diffusion in SiC. The suppression of B diffusion in SiC which was co-implanted with C could be explained by taking account of the formation of Si-C pairs.

Modelling of Boron Diffusion in Silicon Carbide. H.Bracht, N.A.Stolwijk, M.Laube, G.Pensl: Materials Science Forum, 2001, 353-356, 327-30