Diffusion experiments were performed on B-implanted 6H-SiC between 1700 and 2100C. After diffusion, the B concentration profiles were measured by means of secondary ion mass spectrometry. Accurate modeling of B diffusion was achieved on the basis of a kick-out diffusion mechanism which involved only point defects on the Si sub-lattice. The fitting of experimental profiles yielded data, on the B interstitial-controlled B diffusion coefficient, which were in good agreement with published data. The analysis of B diffusion also provided data on the Si interstitial-controlled B diffusion coefficient which was related to the Si self-interstitial contribution to Si diffusion in SiC. This contribution was found to be 2 orders of magnitude lower than an extrapolation of published Si diffusion data.

Diffusion of Boron in Silicon Carbide. K.Rüschenschmidt, H.Bracht, M.Laube, N.A.Stolwijk, G.Pensl: Physica B, 2001, 308-310, 734-7

Table 70

Effective Diffusivities of B in SiC