The redistribution of implanted box-shaped or Pearson B profiles during annealing was studied in 6H-type material by means of secondary ion mass spectrometry. It was found that the enhanced diffusion of B could be strongly suppressed by a surplus of C. A transient behaviour of the B diffusion was observed during annealing.

Transient-Enhanced Diffusion of Boron in SiC M.Laube, G.Pensl: Materials Science Forum, 2000, 338-342, 941-4

Figure 30

Diffusivity of Be in 6H-SiC