The incorporation of D, and its thermal stability in 6H-type crystals, was studied. The D was introduced either by implantation or by plasma treatment. The implantation of D was performed by using an energy of 100keV and a fluence of 2 x 1015/cm2. In as-implanted samples, a classical profile with a D density of about 1020/cm3 at a depth of about 0.75 was revealed by secondary ion mass spectrometry. Other samples were exposed to a D plasma (300C, 0.5h). It was found that, whereas the secondary ion mass spectrometric profiles of plasma-treated samples exhibited a D peak density (1020/cm3) at the surface, the background level of D was reached within less than 0.1. The samples were furnace annealed under flowing N at temperatures of up to 1000C and it was noted that, in contrast to Si and III-V materials, no significant D redistribution occurred in implanted crystals during annealing. In the case of plasma-treated samples, annealing led to a significant reduction in D.

J.M.Zavada, R.G.Wilson, F.Ren, S.J.Pearton, R.F.Davis: Solid-State Electronics, 1997, 41[5], 677-9

 

 

Table 71

Diffusivity of D in SiC

Polytype

Al (/cm3)

B (/cm3)

T (C)

D (cm2/s)

ν (/s)

4H

3.4 x 1016

9.6 x 1016

470

4.3 x 10-16

1.2 x 10-4

4H

1.4 x 1017

1.4 x 1017

510

1.9 x 10-15

7.4 x 10-4

6H

1.8 x 1016

8.1 x 1016

510

3.6 x 10-15

7.8 x 10-4

4H

1.4 x 1017

1.4 x 1017

550

1.1 x 10-14

4.2 x 10-3

4H

1.4 x 1017

1.4 x 1017

620

2.7 x 10-13

9.1 x 10-2

4H

2.4 x 1018

2.0 x 1015

270

8.7 x 10-16

8.1 x 10-3

4H

2.4 x 1018

2.0 x 1015

300

4.6 x 10-15

4.1 x 10-2

4H

2.4 x 1018

2.0 x 1015

350

7.5 x 10-14

6.1 x 10-1

4H

2.4 x 1018

2.0 x 1015

400

7.9 x 10-13

5.9 x 100