The microstructure of direct-current sputtered amorphous SiC was studied by effusion measurements of H and of implanted inert gases He, Ne, Ar and secondary ion mass spectrometry. The results suggested that the motion of inert gas atoms was controlled by diffusion; greatly depending upon a broadening of network openings. Isolated voids disappeared already at C concentrations of 25at%, presumably because interconnected voids were formed. Void formation was mainly attributed to an increase in H incorporation in the samples.

The Diffusion of Hydrogen and Inert Gas in Sputtered a-SiC:H Alloys - Microstructure Study. R.Saleh, L.Munisa, W.Beyer: Solar Energy Materials and Solar Cells, 2006, 90[18-19], 3449-55