The migration of ion-implanted As was investigated at between 1000 and 1200C. The diffusivity was deduced, using electrical methods, from the As profiles. Secondary ion mass spectroscopy was also sometimes used, and the results agreed with those obtained using the electrical method. Two types of oxide were studied. One was a so-called dry oxide which was grown in O, and the other was a so-called wet one which was grown in steam. It was found that the temperature dependence of the diffusivity data could be fitted by assuming a single activation energy. In the case of the wet oxide, the activation energy after annealing in N2-10%H2 was 4.4eV and, after annealing in N2, it was 5.5eV. In the case of the dry oxide, the activation energy was 4.7eV. The latter value was independent of the implanted dose for an ion energy of 40keV and doses of between 1012 and 1015/cm2.

Y.Shacham-Diamond, W.G.Oldham, R.Kazerounian: Journal of Electronic Materials, 1988, 17[6], 519-25