The diffusion of ion-implanted dopant impurities was studied by using secondary ion mass spectrometry and a process simulator. An anomalous diffusivity of the dopants was revealed.

Diffusion of Boron, Phosphorus, Arsenic and Antimony in Thermally Grown Silicon Dioxide. T.Aoyama, H.Tashiro, K.Suzuki: Journal of the Electrochemical Society, 1999, 146[5], 1879-83