The diffusion of In into polycrystalline CdSe films were investigated at 350 to 500C by using secondary ion mass spectrometry. The activation energies determined for the diffusion of In in the grains (0.10eV) were smaller than the values determined for its diffusion in the grain boundaries (0.78eV), and was attributed to impurities and intrinsic defects accumulating at the grain boundaries.

Oxygen and Indium Diffusion into SiO2 Encapsulated Polycrystalline CdSe Films. R.M.Langford, M.J.Lee, S.W.Wright, C.P.Judge, R.J.Chater, T.J.Tate: Journal of Electronic Materials, 2001, 30[8], 925-30