Secondary ion mass spectrometry was used to profile the interdiffusion of network O in a Si16O2/Si18O2 thin-film structure. The diffusivity, at 1200 to 1400C, could be described by:

D (cm2/s) = 2.6 x 100 exp[-4.7(eV)/kT]

These diffusivity values were lower than, but with a higher activation energy than, those previously reported, and approached the intrinsic diffusivity; as uncomplicated by extrinsic gas-phase isotope exchange reactions.

Self-Diffusivity of Network Oxygen in Vitreous SiO2. J.C.Mikkelsen: Applied Physics Letters, 1984, 45[11], 1187-9