A stable fluorosilicate glass was fabricated via chemical vapor deposition. The films were subjected to temperature and humidity stressing for water absorption studies, and were thermally stressed for F diffusion studies. The results of Fourier transform infra-red spectrometry and secondary ion mass spectrometry indicated that films which were produced from SiF4 absorbed less water and diffused less F into SiOx than did films which were produced from C2F6. The activation energies for F diffusion were calculated to be equal to 1.00 and 0.82eV for SiF4- and C2F6-derived fluorosilicate glasses, respectively.

M.J.Shapiro, T.Matsuda, S.V.Nguyen, C.Parks, C.Dziobkowski: Journal of the Electrochemical Society, 1996, 143[7], L156-7