Tracer and chemical diffusion coefficients were determined for monocrystalline samples under various conditions of temperature, O partial pressure and acceptor (Fe) dopant concentration. The O tracer diffusion data were obtained, at 873 to 1173K and 100kPa, by means of 18O isotope exchange and analysis of the resultant diffusion profiles by means of secondary ion mass spectrometry. In the case of chemical diffusion, an in situ and spatially resolved optical relaxation technique was used at 673 to 973K, and 10Pa to 100kPa. The dopant concentration in both cases ranged from 4.3 x 1018 to 4.9 x 1019/cm3. The ex situ (tracer) and in situ concentration profiles were accurately predicted by defect chemical calculations.

Tracer Diffusion and Chemical Diffusion of Oxygen in Acceptor Doped SrTiO3. J.Claus, M.Leonhardt, J.Maier: Journal of the Physics and Chemistry of Solids, 2000, 61[8], 1199-207