Secondary ion mass spectroscopy was used to measure phosphorus concentration profiles in TaSi2 thin films deposited onto P-doped polycrystalline Si/SiO2/Si wafers by co-sputtering. Fast redistribution of P in TaSi2 took place via up‐diffusion from the polycrystalline Si layer. Radioactive assay of 32P, obtained by neutron activation, confirmed the fast‐diffusing character of P in TaSi2. From preliminary results, the temperature dependence of the diffusion coefficients at 664 to 913C could be expressed as:

Dc = 6.44 x 10-10exp[-0.61/(kT)]

Da = 2.0 x 10-8exp[-0.76/(kT)]

where Dc and Da represented diffusion in the silicide film, near to and far from, from the surface, respectively.

Phosphorus Distribution in TaSi2 Films by Diffusion from a Polycrystalline Silicon Layer. J.Pelleg, S.P.Murarka: Journal Applied Physics, 1983, 54, 1337