The migration of 15N, which had been implanted into non-stoichiometric TiN1-x monocrystals, was studied at temperatures of between 700 and 1400C. The concentration profiles were measured by means of secondary ion mass spectrometry, and the diffusion coefficients were deduced by fitting Gaussian profiles. It was found that the diffusivity data (table 73) could be described by:

D (cm2/s) = 4 x 10-7 exp[-2.26(eV)/kT]

in layers which were close to the surface (high tracer concentration). In deeper layers, the data were described by:

D (cm2/s) = 1.3 x 10-8 exp[-1.65(eV)/kT]

F.Abautret, P.Eveno: Revue de Physique Appliquée, 1990, 25[11], 1113-9