The diffusivities of B, P and As implanted into TiSi2 were analyzed between 500 and 900C using secondary ion mass spectroscopy. It is shown that P and As had high (and almost equal) diffusivities, as compared with that of B; which appeared immobile. This difference was attributed to the very high stability of TiB2 (as compared with TiSi2) and the probable precipitation of B in the form of a titanium boride. The lattice diffusion coefficients for As and P were deduced from the diffusion profiles, and ranged from 10−17 to 10−14cm2/s between 550 and 800C. The respective activation energies were found to be 1.8 and 2.0eV. These values were close to the activation energy (1.8eV) for the self‐diffusion of Si in TiSi2. The diffusion profiles also revealed a high grain boundary diffusivity and the accumulation of dopant at the TiSi2/Si interface.

Boron, Phosphorus, and Arsenic Diffusion in TiSi2. P.Gas, V.Deline, F.M.d‘Heurle, A.Michel, G.Scilla: Journal of Applied Physics, 1986, 60, 1634