A method was developed for determining the impurity diffusion coefficient in tungsten silicide. Lateral diffusion profiles in tungsten silicide wire were modelled, and this permitted determination of the diffusion coefficient of boron from three‐dimensional secondary ion mass spectrometry impurity profiles. The diffusivity was deduced to be of the order of 10−8cm2/s at 900C. This was the first estimate of the impurity diffusion coefficient in silicide, and revealed that it is more than one million times larger than that in silicon.

Diffusion Coefficient of Boron in Tungsten Silicide. K.Suzuki, H.Horie, Y.Yamashita, Y.Kataoka: Applied Physics Letters, 1990, 57, 1018