Zn0.94Mg0.06O/ZnO heterostructures were grown on 2in. sapphire wafer using metal organic chemical vapor deposition. Photoluminescence mapping demonstrated that Mg distribution on the entire wafer was very uniform (standard deviation of Mg concentration/mean Mg concentration = 1.38%) with average concentration of ∼6%. The effect of annealing on the Mg diffusion in Zn0.94Mg0.06O/ZnO heterostructures was investigated in detail by using secondary ion mass spectrometry. All of the Mg SIMS depth profiles were fitted by three Gaussian distribution functions. The Mg diffusion coefficient in the as-grown Zn0.94Mg0.06O layer deposited at 700C was two orders of magnitude lower than that of annealed samples, which clearly indicates that the deposition temperature of 700C was much more beneficial to grow ZnMgO/ZnO heterostructures and quantum wells.

A SIMS Study on Mg Diffusion in Zn0.94Mg0.06O/ZnO Heterostructures Grown by Metal Organic Chemical Vapor Deposition. Yang, L.L., Zhao, Q.X., Xing, G.Z., Wang, D.D., Wu, T., Willander, M., Ivanov, I., Yang, J.H.: Applied Surface Science, 2011, 257[20], 8629-33