Commercial-quality Czochralski-type wafers of (111) orientation were diffusion-annealed at 900 to 1250C. The diffusion coefficients ranged from about 2 x 10-15 to 6 x 10-12cm2/s. The results could be described by:

D (cm2/s) = 5.0 x 10-1 exp[-3.34(eV)/kT]

It was suggested that the diffusion mechanism was mainly substitutional in nature.

E.Janzen, H.G.Grimmeiss, A.Lodding, C.Deline: Journal of Applied Physics, 1982, 53[11], 7367-71