Zinc self-diffusion along the growth direction was analyzed for the isotopic multilayer ZnO thin film ((64ZnO 68ZnO)6 64ZnO) deposited by pulsed laser deposition. The isotopic distribution was measured using a secondary ion mass spectrometry. The amplitude of the 64Zn abundance in the depth profile was reduced by annealing at 993K for several hours due to interdiffusion between the 64ZnO and 68ZnO layers. The diffusion profiles at the isotopic interfaces were analyzed using a periodic equation. The obtained zinc self-diffusion coefficients at several isotopic interfaces along the growth direction showed that the self-diffusion coefficients increased towards the film/substrate interface. A similar trend was also found in the lateral direction. The variation among the self-diffusion coefficients was related to the film thicknesses at the analysis positions. Since zinc self-diffusion was controlled by a vacancy-mediated mechanism, the variation in zinc diffusivity along the growth direction could be attributed to the effect of compressive biaxial stress. These findings were useful for producing high-quality ZnO devices.

Correlation between Film Thickness and Zinc Defect Distribution along the Growth Direction in an Isotopic Multilayer ZnO Thin Film Grown by Pulsed Laser Deposition Analyzed using the Internal Diffusion Method. Matsumoto, K., Adachi, Y., Ohgaki, T., Ohashi, N., Haneda, H., Sakaguchi, I.: Solid State Communications, 2010, 150[43-44], 2118-21