An investigation was made of diffusion into (111) samples, from doped epitaxial source layers which were deposited in flowing H2, by using the spreading resistance. It was found that the acceptor exhibited a significantly lower mobility when freed from surface effects. At 1244 to 1338C, the results could be described by:

D (cm2/s) = 1.37 x 100 exp[-3.70(eV)/kT]

R.N.Ghoshtagore: Physical Review B, 1971, 3[8], 2507-14