Aluminium impurity diffusion in 3N-purity polycrystalline Mg was examined using the thin film method. Approximately 500nm-thick Al films were deposited onto in situ RF plasma-cleaned polycrystalline Mg by DC magnetron sputtering from 3N-purity Al targets. Specimens were then diffusion annealed at 300 and 400C in quartz capsules that were evacuated to 10-8torr and back-filled with Ar-H2 mixtures. The concentration profile of Al diffusion into single-phase Mg was determined by depth-profiling technique using secondary ion mass spectroscopy. The Al impurity diffusion coefficients at 300 and 400C were determined to be 1.74 x 10-17 and 2.38 x 10-15m2/s, respectively

Impurity and Tracer Diffusion Studies in Magnesium and its Alloys. S.Brennan, A.P.Warren, K.R.Coffey, Y.Sohn, N.Kulkarni, P.Todd: Magnesium Technology, 2010, 537-8