Monocrystalline wafer samples were annealed at 1070 to 1300C, and the resultant diffusion profiles were determined by using a 4-point sheet conductivity technique. It was found that the results could be described by:

D (cm2/s) = 1.5 x 101 exp[-3.75(eV)/kT]

R.Sellmann, J.Mimkes: Physica Status Solidi A, 1989, 112[1], K5-7