A high power xenon arc image furnace was used in the crystal growth of LaB6. High purity single crystals of LaB6 having diameters of 2 to 5mm were satisfactorily prepared. Infra-red heating was utilized because it advantageously formed a stable molten zone. Purification was performed by preferential evaporation of impurities, because of the high melting point of LaB6. The dislocation density was closely related to crystal diameter and varied from 106/cm2 for the larger to 104/cm2 for the smaller diameters. Experimental results for the dislocation distribution could be explained by Tsivinsky's temperature gradient model.

Dislocations in LaB6 Crystals Grown with a Xenon Arc Image Furnace. Aida, T., Fukazawa, T.: Journal of Crystal Growth, 1986, 78[2], 263-73