The de Haas-van Alphen effect in single crystal was studied in detail using the field modulation technique. Observed de Haas-van Alphen frequencies for the (010) and (110) planes ranged from 106 to 108gauss. The angular dependence of the de Haas-van Alphen frequencies and the disappearance of the oscillation in some angular regions indicated that the Fermi surface consisted of a multiply connected surface, large pieces of which were centered at the point X (or M) in the simple cubic Brillouin zone. The electron density calculated from the Fermi surface was 1.39 x 1022/cm3, which corresponded to just one electron per unit cell.

De Haas-Van Alphen Effect and Fermi Surface of LaB6. Ishizawa, Y., Tanaka, T., Bannai, E., Kawai, S.: Journal of the Physical Society of Japan, 1977, 42[1], 112-8