The effects of interface structure upon the formation and characteristics of a LaB6/chemically etched GaAs(001) Schottky barrier were investigated using current-voltage measurements, high-energy ion-scattering and X-ray photo-electron spectroscopy. The barrier heights were 0.7eV for as-deposited samples and 0.9eV after annealing at 400 to 800C. Annealing at above 400C caused reduction of GaAs native oxides and a relaxation of interface disorder. This interface structure was found to determine the pinning position of the Fermi level.

Formation and Characteristics of LaB6/GaAs(001) Schottky Barrier. Uchida, Y., Yokotsuka, T., Narusawa, T., Nakashima, H.: Applied Surface Science, 1988, 33-34[C], 1037-43